Acceptor Concentration Solution

STEP 0: Pre-Calculation Summary
Formula Used
Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)
Na = |Q|/([Charge-e]*xno*Aj)
This formula uses 1 Constants, 4 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Variables Used
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.
Total Acceptor Charge - (Measured in Coulomb) - Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.
Charge Penetration N-type - (Measured in Meter) - Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.
Junction Area - (Measured in Square Meter) - The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.
STEP 1: Convert Input(s) to Base Unit
Total Acceptor Charge: 13 Coulomb --> 13 Coulomb No Conversion Required
Charge Penetration N-type: 0.019 Micrometer --> 1.9E-08 Meter (Check conversion here)
Junction Area: 5401.3 Square Micrometer --> 5.4013E-09 Square Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Na = |Q|/([Charge-e]*xno*Aj) --> 13/([Charge-e]*1.9E-08*5.4013E-09)
Evaluating ... ...
Na = 7.90644149770933E+35
STEP 3: Convert Result to Output's Unit
7.90644149770933E+35 1 per Cubic Meter --> No Conversion Required
FINAL ANSWER
7.90644149770933E+35 7.9E+35 1 per Cubic Meter <-- Acceptor Concentration
(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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16 SSD Junction Calculators

Junction Capacitance
Go Junction Capacitance = (Junction Area/2)*sqrt((2*[Charge-e]*Constant Length Offset*Doping Concentration of Base)/(Source Voltage-Source Voltage 1))
Length of P-Side Junction
Go Length of P-Side Junction = (Optical Current/([Charge-e]*Junction Area*Optical Generation Rate))-(Junction Transition Width+Diffusion Length of Transition Region)
Junction Transition Width
Go Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration)
Series Resistance in P-type
Go Series Resistance in P Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in N Junction
Series Resistance in N-type
Go Series Resistance in N Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in P Junction
Junction Voltage
Go Junction Voltage = Source Voltage-(Series Resistance in P Junction+Series Resistance in N Junction)*Electric Current
Acceptor Concentration
Go Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)
N-Type Width
Go Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])
Cross-Sectional Area of Junction
Go Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration)
Donor Concentration
Go Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area)
Total Acceptor Charge
Go Total Acceptor Charge = [Charge-e]*Charge Penetration N-type*Junction Area*Acceptor Concentration
Absorption Coefficient
Go Absorption Coefficient = (-1/Sample Thickness)*ln(Absorbed Power/Incident Power)
Absorbed Power
Go Absorbed Power = Incident Power*exp(-Sample Thickness*Absorption Coefficient)
Net Distribution of Charge
Go Net Distribution = (Donor Concentration-Acceptor Concentration)/Graded Constant
P-N Junction Length
Go Junction Length = Constant Length Offset+Effective Channel Length
Quantum Number
Go Quantum Number = [Coulomb]*Potential Well Length/3.14

Acceptor Concentration Formula

Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)
Na = |Q|/([Charge-e]*xno*Aj)

What are the electron and hole concentrations?

Electron concentration increases as F E moves closer to the conduction band. for F E larger than v E by several kT . From these equations, the concentration of holes in the valence band is . Thus hole concentration increases as F E moves closer to the valence band.

How to Calculate Acceptor Concentration?

Acceptor Concentration calculator uses Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area) to calculate the Acceptor Concentration, The Acceptor Concentration formula refers to the concentration or abundance of acceptor impurities in a semiconductor material. Acceptors are dopant atoms that have fewer valence electrons than the host semiconductor atoms, resulting in an excess positive charge. Acceptor Concentration is denoted by Na symbol.

How to calculate Acceptor Concentration using this online calculator? To use this online calculator for Acceptor Concentration, enter Total Acceptor Charge (|Q|), Charge Penetration N-type (xno) & Junction Area (Aj) and hit the calculate button. Here is how the Acceptor Concentration calculation can be explained with given input values -> 7.9E+35 = 13/([Charge-e]*1.9E-08*5.4013E-09) .

FAQ

What is Acceptor Concentration?
The Acceptor Concentration formula refers to the concentration or abundance of acceptor impurities in a semiconductor material. Acceptors are dopant atoms that have fewer valence electrons than the host semiconductor atoms, resulting in an excess positive charge and is represented as Na = |Q|/([Charge-e]*xno*Aj) or Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area). Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device, Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material & The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.
How to calculate Acceptor Concentration?
The Acceptor Concentration formula refers to the concentration or abundance of acceptor impurities in a semiconductor material. Acceptors are dopant atoms that have fewer valence electrons than the host semiconductor atoms, resulting in an excess positive charge is calculated using Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area). To calculate Acceptor Concentration, you need Total Acceptor Charge (|Q|), Charge Penetration N-type (xno) & Junction Area (Aj). With our tool, you need to enter the respective value for Total Acceptor Charge, Charge Penetration N-type & Junction Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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