Effective Capacitance in CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc)
This formula uses 1 Constants, 5 Variables
Constants Used
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23
Variables Used
Effective Capacitance in CMOS - (Measured in Farad) - Effective Capacitance in CMOS is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential.
Duty Cycle - A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.
Off Current - (Measured in Ampere) - Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Gates on Critical Path - Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.
STEP 1: Convert Input(s) to Base Unit
Duty Cycle: 1.3E-25 --> No Conversion Required
Off Current: 0.01 Milliampere --> 1E-05 Ampere (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Gates on Critical Path: 0.95 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc) --> 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02)
Evaluating ... ...
Ceff = 5.13789525162511E-06
STEP 3: Convert Result to Output's Unit
5.13789525162511E-06 Farad -->5.13789525162511 Microfarad (Check conversion here)
FINAL ANSWER
5.13789525162511 5.137895 Microfarad <-- Effective Capacitance in CMOS
(Calculation completed in 00.004 seconds)

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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
Go PN Junction Length = Depletion Region Width+Effective Channel Length
CMOS Mean Free Path
Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Voltage at Minimum EDP
Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Width of Source Diffusion
Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
Go Area of Source Diffusion = Length of Source*Transition Width

Effective Capacitance in CMOS Formula

Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc)

What is Subthreshold conduction ?

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

How to Calculate Effective Capacitance in CMOS?

Effective Capacitance in CMOS calculator uses Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage) to calculate the Effective Capacitance in CMOS, The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. Effective Capacitance in CMOS is denoted by Ceff symbol.

How to calculate Effective Capacitance in CMOS using this online calculator? To use this online calculator for Effective Capacitance in CMOS, enter Duty Cycle (D), Off Current (ioff), Base Collector Voltage (Vbc) & Gates on Critical Path (Ng) and hit the calculate button. Here is how the Effective Capacitance in CMOS calculation can be explained with given input values -> 5.1E+6 = 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02) .

FAQ

What is Effective Capacitance in CMOS?
The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential and is represented as Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc) or Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). A Duty cycle or power cycle is the fraction of one period in which a signal or system is active, Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state & Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.
How to calculate Effective Capacitance in CMOS?
The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential is calculated using Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). To calculate Effective Capacitance in CMOS, you need Duty Cycle (D), Off Current (ioff), Base Collector Voltage (Vbc) & Gates on Critical Path (Ng). With our tool, you need to enter the respective value for Duty Cycle, Off Current, Base Collector Voltage & Gates on Critical Path and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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