Fabrication Process Parameter of NMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance
γ = sqrt(2*[Charge-e]*NP*[Permitivity-vacuum])/Cox
This formula uses 2 Constants, 1 Functions, 3 Variables
Constants Used
[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
Variables Used
Fabrication Process Parameter - The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.
Doping Concentration of P Substrate - (Measured in 1 per Cubic Meter) - The doping concentration of P substrate is the number of impurities added to the substrate. It is the total concentration of acceptor ions.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
STEP 1: Convert Input(s) to Base Unit
Doping Concentration of P Substrate: 6E+16 1 per Cubic Centimeter --> 6E+22 1 per Cubic Meter (Check conversion here)
Oxide Capacitance: 2.02 Microfarad --> 2.02E-06 Farad (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
γ = sqrt(2*[Charge-e]*NP*[Permitivity-vacuum])/Cox --> sqrt(2*[Charge-e]*6E+22*[Permitivity-vacuum])/2.02E-06
Evaluating ... ...
γ = 204.204864690003
STEP 3: Convert Result to Output's Unit
204.204864690003 --> No Conversion Required
FINAL ANSWER
204.204864690003 204.2049 <-- Fabrication Process Parameter
(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri
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17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS
Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Current Entering Drain Terminal of NMOS given Gate Source Voltage
Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Body Effect in NMOS
Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))
Current Entering Drain Terminal of NMOS
Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)
NMOS as Linear Resistance
Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))
Drain Current when NMOS Operates as Voltage-Controlled Current Source
Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Current Entering Drain-Source at Saturation Region of NMOS
Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Fabrication Process Parameter of NMOS
Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance
Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage
Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2
Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS
Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2
Electron Drift Velocity of Channel in NMOS Transistor
Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel
Total Power Supplied in NMOS
Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)
Drain Current given NMOS Operates as Voltage-Controlled Current Source
Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio
Output Resistance of Current Source NMOS given Drain Current
Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation
Total Power Dissipated in NMOS
Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance
Positive Voltage given Channel Length in NMOS
Go Voltage = Device Parameter*Length of the Channel
Oxide Capacitance of NMOS
Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Fabrication Process Parameter of NMOS Formula

Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance
γ = sqrt(2*[Charge-e]*NP*[Permitivity-vacuum])/Cox

What is the other name of fabrication process parameter ?

The fabrication process parameter is also known as the body-effect parameter. It is denoted by γ. It is positive in NMOS.

How to Calculate Fabrication Process Parameter of NMOS?

Fabrication Process Parameter of NMOS calculator uses Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance to calculate the Fabrication Process Parameter, The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface. Fabrication Process Parameter is denoted by γ symbol.

How to calculate Fabrication Process Parameter of NMOS using this online calculator? To use this online calculator for Fabrication Process Parameter of NMOS, enter Doping Concentration of P Substrate (NP) & Oxide Capacitance (Cox) and hit the calculate button. Here is how the Fabrication Process Parameter of NMOS calculation can be explained with given input values -> 204.2049 = sqrt(2*[Charge-e]*6E+22*[Permitivity-vacuum])/2.02E-06.

FAQ

What is Fabrication Process Parameter of NMOS?
The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface and is represented as γ = sqrt(2*[Charge-e]*NP*[Permitivity-vacuum])/Cox or Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance. The doping concentration of P substrate is the number of impurities added to the substrate. It is the total concentration of acceptor ions & Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
How to calculate Fabrication Process Parameter of NMOS?
The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface is calculated using Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance. To calculate Fabrication Process Parameter of NMOS, you need Doping Concentration of P Substrate (NP) & Oxide Capacitance (Cox). With our tool, you need to enter the respective value for Doping Concentration of P Substrate & Oxide Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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