Gate Length of MSFET Calculator

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✖Saturated drift velocity is the maximum velocity a charge carrier in a semiconductor.ⓘ Saturated Drift Velocity [V_s]			+10% -10%
✖Cut-off frequency MESFET is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.ⓘ Cut-off Frequency MESFET [f_co]			+10% -10%

✖Gate Length is defined the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode.ⓘ Gate Length of MSFET [L_gate]

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Formula

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Gate Length of MSFET

Formula

`"L"_{"gate"} = "V"_{"s"}/(4*pi*"f"_{"co"})`

Example

`"13.24084μm"="5mm/s"/(4*pi*"30.05Hz")`

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Gate Length of MSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET)
L_gate = V_s/(4*pi*f_co)
This formula uses 1 Constants, 3 Variables

Constants Used

pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Gate Length - (Measured in Meter) - Gate Length is defined the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode.
Saturated Drift Velocity - (Measured in Meter per Second) - Saturated drift velocity is the maximum velocity a charge carrier in a semiconductor.
Cut-off Frequency MESFET - (Measured in Hertz) - Cut-off frequency MESFET is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.

STEP 1: Convert Input(s) to Base Unit

Saturated Drift Velocity: 5 Millimeter per Second --> 0.005 Meter per Second (Check conversion here)
Cut-off Frequency MESFET: 30.05 Hertz --> 30.05 Hertz No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

L_gate = V_s/(4*pi*f_co) --> 0.005/(4*pi*30.05)

Evaluating ... ...

L_gate = 1.32408438512392E-05

STEP 3: Convert Result to Output's Unit

1.32408438512392E-05 Meter -->13.2408438512392 Micrometer (Check conversion here)

FINAL ANSWER

13.2408438512392 ≈ 13.24084 Micrometer <-- Gate Length

(Calculation completed in 00.004 seconds)

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Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 2100+ more calculators!

< 13 MESFET Calculators

Cut Off Frequency MESFET using Maximum Frequency

Go Cut-off Frequency MESFET = (2*Maximum Frequency of Oscillations)/(sqrt(Drain Resistance/(Source Resistance+Gate Metallization Resistance+Input Resistance)))

Gate Metallization Resistance MESFET

Go Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)

Source Resistance MESFET

Go Source Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Input Resistance)

Input Resistance MESFET

Go Input Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations))-(Gate Metallization Resistance+Source Resistance)

Drain Resistance MESFET

Go Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency MESFET^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)

Transconductance in Saturation

Go Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))

Maximum Frequency of Oscillations MESFET

Go Maximum Frequency of Oscillations = (Gain Unity Frequency/2)*sqrt(Drain Resistance/Gate Metallization Resistance)

Maximum Frequency of Oscillation given Transconductance

Go Maximum Frequency of Oscillations = Transconductance/(pi*Gate Source Capacitance)

Cut Off Frequency MESFET given Transconductance and Capacitance

Go Cut-off Frequency MESFET = Transconductance/(2*pi*Gate Source Capacitance)

Gate Source Capacitance MESFET

Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency MESFET)

Cut-off frequency MESFET

Go Cut-off Frequency MESFET = Saturated Drift Velocity/(4*pi*Gate Length)

Transconductance MESFET

Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency MESFET

Gate Length of MSFET

Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET)

Gate Length of MSFET Formula

Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET)
L_gate = V_s/(4*pi*f_co)

What is Channel length in VLSI?

The effective distance between the drain and the source where the channel would eventually be formed and the actual length an electron would travel from source to drain is called the Effective Channel Length.

How to Calculate Gate Length of MSFET?

Gate Length of MSFET calculator uses Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET) to calculate the Gate Length, The Gate Length of MSFET formula is defined as the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode. Gate Length is denoted by L_gate symbol.

How to calculate Gate Length of MSFET using this online calculator? To use this online calculator for Gate Length of MSFET, enter Saturated Drift Velocity (V_s) & Cut-off Frequency MESFET (f_co) and hit the calculate button. Here is how the Gate Length of MSFET calculation can be explained with given input values -> 13.24084 = 0.005/(4*pi*30.05).

FAQ

What is Gate Length of MSFET?

The Gate Length of MSFET formula is defined as the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode and is represented as L_gate = V_s/(4*pi*f_co) or Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET). Saturated drift velocity is the maximum velocity a charge carrier in a semiconductor & Cut-off frequency MESFET is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.

How to calculate Gate Length of MSFET?

The Gate Length of MSFET formula is defined as the distance between the source and the drain electrodes along the direction perpendicular to the plane of the semiconductor material, and parallel to the gate electrode is calculated using Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET). To calculate Gate Length of MSFET, you need Saturated Drift Velocity (V_s) & Cut-off Frequency MESFET (f_co). With our tool, you need to enter the respective value for Saturated Drift Velocity & Cut-off Frequency MESFET and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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