Gate Metallization Resistance MESFET Calculator

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✖Drain resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.ⓘ Drain Resistance [R_d]			+10% -10%
✖Cut-off frequency MESFET is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.ⓘ Cut-off Frequency MESFET [f_co]			+10% -10%
✖Maximum frequency of oscillations is defined as the practical upper bound for useful circuit operation with MESFET.ⓘ Maximum Frequency of Oscillations [f_m]			+10% -10%
✖Source Resistance a purely resistive device can be experimentally determined by increasingly loading the device.ⓘ Source Resistance [R_s]			+10% -10%
✖Input resistance MESFET is defined as the total internal resistance as experienced by MESFET.ⓘ Input Resistance [R_i]			+10% -10%

✖Gate metallization resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction.ⓘ Gate Metallization Resistance MESFET [R_g]

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Formula

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Gate Metallization Resistance MESFET

Formula

`"R"_{"g"} = (("R"_{"d"}*"f"_{"co"}^2)/(4*"f"_{"m"}^2))-("R"_{"s"}+"R"_{"i"}) `

Example

`"2.794445Ω"=(("450Ω"*("30.05Hz")^2)/(4*("65Hz")^2))-("5.75Ω"+"15.5Ω") `

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Gate Metallization Resistance MESFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)
R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i)
This formula uses 6 Variables

Variables Used

Gate Metallization Resistance - (Measured in Ohm) - Gate metallization resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction.
Drain Resistance - (Measured in Ohm) - Drain resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.
Cut-off Frequency MESFET - (Measured in Hertz) - Cut-off frequency MESFET is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.
Maximum Frequency of Oscillations - (Measured in Hertz) - Maximum frequency of oscillations is defined as the practical upper bound for useful circuit operation with MESFET.
Source Resistance - (Measured in Ohm) - Source Resistance a purely resistive device can be experimentally determined by increasingly loading the device.
Input Resistance - (Measured in Ohm) - Input resistance MESFET is defined as the total internal resistance as experienced by MESFET.

STEP 1: Convert Input(s) to Base Unit

Drain Resistance: 450 Ohm --> 450 Ohm No Conversion Required
Cut-off Frequency MESFET: 30.05 Hertz --> 30.05 Hertz No Conversion Required
Maximum Frequency of Oscillations: 65 Hertz --> 65 Hertz No Conversion Required
Source Resistance: 5.75 Ohm --> 5.75 Ohm No Conversion Required
Input Resistance: 15.5 Ohm --> 15.5 Ohm No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i) --> ((450*30.05^2)/(4*65^2))-(5.75+15.5)

Evaluating ... ...

R_g = 2.79444526627219

STEP 3: Convert Result to Output's Unit

2.79444526627219 Ohm --> No Conversion Required

FINAL ANSWER

2.79444526627219 ≈ 2.794445 Ohm <-- Gate Metallization Resistance

(Calculation completed in 00.005 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 13 MESFET Calculators

Cut Off Frequency MESFET using Maximum Frequency

Go Cut-off Frequency MESFET = (2*Maximum Frequency of Oscillations)/(sqrt(Drain Resistance/(Source Resistance+Gate Metallization Resistance+Input Resistance)))

Gate Metallization Resistance MESFET

Go Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)

Source Resistance MESFET

Go Source Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Input Resistance)

Input Resistance MESFET

Go Input Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations))-(Gate Metallization Resistance+Source Resistance)

Drain Resistance MESFET

Go Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency MESFET^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)

Transconductance in Saturation

Go Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))

Maximum Frequency of Oscillations MESFET

Go Maximum Frequency of Oscillations = (Gain Unity Frequency/2)*sqrt(Drain Resistance/Gate Metallization Resistance)

Maximum Frequency of Oscillation given Transconductance

Go Maximum Frequency of Oscillations = Transconductance/(pi*Gate Source Capacitance)

Cut Off Frequency MESFET given Transconductance and Capacitance

Go Cut-off Frequency MESFET = Transconductance/(2*pi*Gate Source Capacitance)

Gate Source Capacitance MESFET

Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency MESFET)

Cut-off frequency MESFET

Go Cut-off Frequency MESFET = Saturated Drift Velocity/(4*pi*Gate Length)

Transconductance MESFET

Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency MESFET

Gate Length of MSFET

Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency MESFET)

Gate Metallization Resistance MESFET Formula

Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)
R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i)

What is MESFET?

A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate.

How to Calculate Gate Metallization Resistance MESFET?

Gate Metallization Resistance MESFET calculator uses Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance) to calculate the Gate Metallization Resistance, The Gate Metallization Resistance MESFET formula is defined as the resistance associated with the metal contacts that are deposited on top of the semiconductor material to form the gate electrode. Gate Metallization Resistance is denoted by R_g symbol.

How to calculate Gate Metallization Resistance MESFET using this online calculator? To use this online calculator for Gate Metallization Resistance MESFET, enter Drain Resistance (R_d), Cut-off Frequency MESFET (f_co), Maximum Frequency of Oscillations (f_m), Source Resistance (R_s) & Input Resistance (R_i) and hit the calculate button. Here is how the Gate Metallization Resistance MESFET calculation can be explained with given input values -> 2.794445 = ((450*30.05^2)/(4*65^2))-(5.75+15.5) .

FAQ

What is Gate Metallization Resistance MESFET?

The Gate Metallization Resistance MESFET formula is defined as the resistance associated with the metal contacts that are deposited on top of the semiconductor material to form the gate electrode and is represented as R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i) or Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance) . Drain resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage, Cut-off frequency MESFET is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through, Maximum frequency of oscillations is defined as the practical upper bound for useful circuit operation with MESFET, Source Resistance a purely resistive device can be experimentally determined by increasingly loading the device & Input resistance MESFET is defined as the total internal resistance as experienced by MESFET.

How to calculate Gate Metallization Resistance MESFET?

The Gate Metallization Resistance MESFET formula is defined as the resistance associated with the metal contacts that are deposited on top of the semiconductor material to form the gate electrode is calculated using Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency MESFET^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance) . To calculate Gate Metallization Resistance MESFET, you need Drain Resistance (R_d), Cut-off Frequency MESFET (f_co), Maximum Frequency of Oscillations (f_m), Source Resistance (R_s) & Input Resistance (R_i). With our tool, you need to enter the respective value for Drain Resistance, Cut-off Frequency MESFET, Maximum Frequency of Oscillations, Source Resistance & Input Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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