Intrinsic Gain of BJT Solution

STEP 0: Pre-Calculation Summary
Formula Used
Intrinsic Gain = Early Voltage/Thermal Voltage
Ao = VA/Vt
This formula uses 3 Variables
Variables Used
Intrinsic Gain - Intrinsic Gain is defined as the maximum gain of the BJT.
Early Voltage - (Measured in Volt) - The Early voltage is a phenomenon that occurs in BJTs due to variations in width of base region as the collector-base voltage is changed. This effect changes its current gain and I/O impedance.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.
STEP 1: Convert Input(s) to Base Unit
Early Voltage: 1.25 Volt --> 1.25 Volt No Conversion Required
Thermal Voltage: 4.7 Volt --> 4.7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ao = VA/Vt --> 1.25/4.7
Evaluating ... ...
Ao = 0.265957446808511
STEP 3: Convert Result to Output's Unit
0.265957446808511 --> No Conversion Required
FINAL ANSWER
0.265957446808511 0.265957 <-- Intrinsic Gain
(Calculation completed in 00.004 seconds)

Credits

Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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16 Amplification Factor/Gain Calculators

Amplification Factor of BJT
Go BJT Amplification Factor = (Collector Current/Threshold Voltage)*((Positive DC Voltage+Collector-Emitter Voltage)/Collector Current)
Overall Voltage Gain of Amplifier when Load Resistance is Connected to Output
Go Voltage Gain = Common-Base Current Gain*(1/Collector Resistance+1/Load Resistance)^-1/(Signal Resistance+Emitter Resistance)
Overall Voltage Gain of Buffer Amplifier given Load Resistance
Go Voltage Gain = Load Resistance/(Load Resistance+Emitter Resistance+Signal Resistance/(Common Emitter Current Gain+1))
Overall Voltage Gain given Load Resistance of BJT
Go Voltage Gain = -Transconductance*((Collector Resistance*Load Resistance)/(Collector Resistance+Load Resistance))
Common Mode Gain of BJT
Go Common Mode Gain = -(Collector Resistance/(2*Output Resistance))*(Change in Collector Resistance/Collector Resistance)
Total Power Dissipated in BJT
Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
Voltage Gain given all Voltages
Go Voltage Gain = -(Supply Voltage-Collector-Emitter Voltage)/Thermal Voltage
Voltage Gain given Collector Current
Go Voltage Gain = -(Collector Current/Thermal Voltage)*Collector Resistance
Total Power Supplied in BJT
Go Power = Supply Voltage*(Collector Current+Input Current)
Common-Base Current Gain
Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)
Common-Emitter Current Gain using Common-Base Current Gain
Go Common Emitter Current Gain = Common-Base Current Gain/(1-Common-Base Current Gain)
Open Circuit Voltage Gain given Open Circuit Transresistance
Go Open Circuit Voltage Gain = Open Circuit Transresistance/Input Resistance
Forced Common-Emitter Current Gain
Go Forced Common-Emitter Current Gain = Collector Current/Base Current
Voltage Gain given Transconductance and Collector Resistance
Go Voltage Gain = -Transconductance*Collector Resistance
Intrinsic Gain of BJT
Go Intrinsic Gain = Early Voltage/Thermal Voltage
Short-Circuit Current Gain
Go Current Gain = Output Current/Input Current

20 BJT Circuit Calculators

Transition Frequency of BJT
Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))
Base Current of PNP Transistor using Saturation Current
Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
Total Power Dissipated in BJT
Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
Unity-Gain Bandwidth of BJT
Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)
Reference Current of BJT Mirror
Go Reference Current = Collector Current+(2*Collector Current)/Common Emitter Current Gain
Common Mode Rejection Ratio
Go Common Mode Rejection Ratio = 20*log10(Differential Mode Gain/Common Mode Gain)
Output Resistance of BJT
Go Resistance = (Supply Voltage+Collector-Emitter Voltage)/Collector Current
Thermal Equilibrium Concentration of Minority Charge Carrier
Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
Output Voltage of BJT Amplifier
Go Output Voltage = Supply Voltage-Drain Current*Load Resistance
Total Power Supplied in BJT
Go Power = Supply Voltage*(Collector Current+Input Current)
Common-Base Current Gain
Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)
Collector to Emitter Voltage at Saturation
Go Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
Base Current of PNP Transistor given Emitter Current
Go Base Current = Emitter Current/(Common Emitter Current Gain+1)
Base Current of PNP Transistor using Collector Current
Go Base Current = Collector Current/Common Emitter Current Gain
Collector Current using Emitter Current
Go Collector Current = Common-Base Current Gain*Emitter Current
Base Current of PNP Transistor using Common-Base Current Gain
Go Base Current = (1-Common-Base Current Gain)*Emitter Current
Collector Current of BJT
Go Collector Current = Emitter Current-Base Current
Emitter Current of BJT
Go Emitter Current = Collector Current+Base Current
Short-Circuit Transconductance
Go Transconductance = Output Current/Input Voltage
Intrinsic Gain of BJT
Go Intrinsic Gain = Early Voltage/Thermal Voltage

Intrinsic Gain of BJT Formula

Intrinsic Gain = Early Voltage/Thermal Voltage
Ao = VA/Vt

Which transistor has higher gain BJT or MOS and why?

BJT has more gain than MOSFET because MOSFET shows Quadratic I-V characteristics and BJT shows Exponential I-V characteristics and the change in exponential behavior is more as compared to Quadratic behavior.

How to Calculate Intrinsic Gain of BJT?

Intrinsic Gain of BJT calculator uses Intrinsic Gain = Early Voltage/Thermal Voltage to calculate the Intrinsic Gain, The Intrinsic gain of BJT formula is defined as maximum possible voltage gain of typical transistor, regardless of bias point. It is stated as ratio of supply voltage and threshold voltage. Intrinsic Gain is denoted by Ao symbol.

How to calculate Intrinsic Gain of BJT using this online calculator? To use this online calculator for Intrinsic Gain of BJT, enter Early Voltage (VA) & Thermal Voltage (Vt) and hit the calculate button. Here is how the Intrinsic Gain of BJT calculation can be explained with given input values -> 0.265957 = 1.25/4.7.

FAQ

What is Intrinsic Gain of BJT?
The Intrinsic gain of BJT formula is defined as maximum possible voltage gain of typical transistor, regardless of bias point. It is stated as ratio of supply voltage and threshold voltage and is represented as Ao = VA/Vt or Intrinsic Gain = Early Voltage/Thermal Voltage. The Early voltage is a phenomenon that occurs in BJTs due to variations in width of base region as the collector-base voltage is changed. This effect changes its current gain and I/O impedance & Thermal Voltage is the voltage produced within the p-n junction.
How to calculate Intrinsic Gain of BJT?
The Intrinsic gain of BJT formula is defined as maximum possible voltage gain of typical transistor, regardless of bias point. It is stated as ratio of supply voltage and threshold voltage is calculated using Intrinsic Gain = Early Voltage/Thermal Voltage. To calculate Intrinsic Gain of BJT, you need Early Voltage (VA) & Thermal Voltage (Vt). With our tool, you need to enter the respective value for Early Voltage & Thermal Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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