Oxide Layer Thickness Solution

STEP 0: Pre-Calculation Summary
Formula Used
Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
tox = εox*Wg*Lg/Cin
This formula uses 5 Variables
Variables Used
Oxide Layer Thickness - (Measured in Meter) - The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.
Permittivity of Oxide Layer - (Measured in Farad per Meter) - Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.
Gate Width - (Measured in Meter) - Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.
Length of Gate - (Measured in Meter) - Length of Gate is the measurement or extent of something from end to end.
Input Gate Capacitance - (Measured in Farad) - Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).
STEP 1: Convert Input(s) to Base Unit
Permittivity of Oxide Layer: 149.79 Microfarad per Millimeter --> 0.14979 Farad per Meter (Check conversion here)
Gate Width: 0.285 Millimeter --> 0.000285 Meter (Check conversion here)
Length of Gate: 7 Millimeter --> 0.007 Meter (Check conversion here)
Input Gate Capacitance: 60.01 Microfarad --> 6.001E-05 Farad (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
tox = εox*Wg*Lg/Cin --> 0.14979*0.000285*0.007/6.001E-05
Evaluating ... ...
tox = 0.00497968755207465
STEP 3: Convert Result to Output's Unit
0.00497968755207465 Meter -->4.97968755207465 Millimeter (Check conversion here)
FINAL ANSWER
4.97968755207465 4.979688 Millimeter <-- Oxide Layer Thickness
(Calculation completed in 00.004 seconds)

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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
Go PN Junction Length = Depletion Region Width+Effective Channel Length
CMOS Mean Free Path
Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Voltage at Minimum EDP
Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Width of Source Diffusion
Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
Go Area of Source Diffusion = Length of Source*Transition Width

Oxide Layer Thickness Formula

Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
tox = εox*Wg*Lg/Cin

What are the regions of operation in MOS transistors?

MOS transistors have three regions of operation which includes, cutoff or subthreshold region, linear region and saturation region.

How to Calculate Oxide Layer Thickness?

Oxide Layer Thickness calculator uses Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance to calculate the Oxide Layer Thickness, The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance. Oxide Layer Thickness is denoted by tox symbol.

How to calculate Oxide Layer Thickness using this online calculator? To use this online calculator for Oxide Layer Thickness, enter Permittivity of Oxide Layer ox), Gate Width (Wg), Length of Gate (Lg) & Input Gate Capacitance (Cin) and hit the calculate button. Here is how the Oxide Layer Thickness calculation can be explained with given input values -> 4.986669 = 0.14979*0.000285*0.007/6.001E-05.

FAQ

What is Oxide Layer Thickness?
The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance and is represented as tox = εox*Wg*Lg/Cin or Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance. Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field, Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS, Length of Gate is the measurement or extent of something from end to end & Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).
How to calculate Oxide Layer Thickness?
The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance is calculated using Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance. To calculate Oxide Layer Thickness, you need Permittivity of Oxide Layer ox), Gate Width (Wg), Length of Gate (Lg) & Input Gate Capacitance (Cin). With our tool, you need to enter the respective value for Permittivity of Oxide Layer, Gate Width, Length of Gate & Input Gate Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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