Gate to Source Potential Solution

STEP 0: Pre-Calculation Summary
Formula Used
Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential
Vgs = 2*Vgc-Vgd
This formula uses 3 Variables
Variables Used
Gate to Source Potential - (Measured in Volt) - Gate to Source Potential is voltage between gate and emitter.
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Gate to Drain Potential - (Measured in Volt) - Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.
STEP 1: Convert Input(s) to Base Unit
Gate to Channel Voltage: 7.011 Volt --> 7.011 Volt No Conversion Required
Gate to Drain Potential: 9.02 Volt --> 9.02 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vgs = 2*Vgc-Vgd --> 2*7.011-9.02
Evaluating ... ...
Vgs = 5.002
STEP 3: Convert Result to Output's Unit
5.002 Volt --> No Conversion Required
FINAL ANSWER
5.002 Volt <-- Gate to Source Potential
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Vishwakarma Government Engineering College (VGEC), Ahmedabad
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16 Analog VLSI Design Calculators

Potential between Source to Body
Go Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
Gate to Drain Capacitance
Go Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)
Gate to Base Capacitance
Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)
Gate to Source Capacitance
Go Gate to Source Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Drain Capacitance)
Drain Voltage
Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))
Potential from Drain to Source
Go Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient
Gate to Channel Voltage
Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage
Gate to Collector Potential
Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
Gate to Source Potential
Go Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential
Gate to Drain Potential
Go Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential
Minimum High Output Voltage
Go Minimum High Output Voltage = High Noise Margin+Minimum High Input Voltage
Minimum High Input Voltage
Go Minimum High Input Voltage = Minimum High Output Voltage-High Noise Margin
High Noise Margin
Go High Noise Margin = Minimum High Output Voltage-Minimum High Input Voltage
Maximum Low Output Voltage
Go Maximum Low Output Voltage = Maximum Low Input Voltage-Low Noise Margin
Maximum Low Input Voltage
Go Maximum Low Input Voltage = Low Noise Margin+Maximum Low Output Voltage
Low Noise Margin
Go Low Noise Margin = Maximum Low Input Voltage-Maximum Low Output Voltage

Gate to Source Potential Formula

Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential
Vgs = 2*Vgc-Vgd

Explain why is the number of gate inputs to CMOS gates usually limited to four?

Higher the number of stacks, slower the gate will be. In NOR and NAND gates the number of gates present in the stack is usually alike as the number of inputs plus one. So input are restricted to four.

How to Calculate Gate to Source Potential?

Gate to Source Potential calculator uses Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential to calculate the Gate to Source Potential, The Gate to Source Potential formula is defined as the voltage between gate and emitter. Gate to Source Potential is denoted by Vgs symbol.

How to calculate Gate to Source Potential using this online calculator? To use this online calculator for Gate to Source Potential, enter Gate to Channel Voltage (Vgc) & Gate to Drain Potential (Vgd) and hit the calculate button. Here is how the Gate to Source Potential calculation can be explained with given input values -> 5 = 2*7.011-9.02 .

FAQ

What is Gate to Source Potential?
The Gate to Source Potential formula is defined as the voltage between gate and emitter and is represented as Vgs = 2*Vgc-Vgd or Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential. Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage & Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.
How to calculate Gate to Source Potential?
The Gate to Source Potential formula is defined as the voltage between gate and emitter is calculated using Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential. To calculate Gate to Source Potential, you need Gate to Channel Voltage (Vgc) & Gate to Drain Potential (Vgd). With our tool, you need to enter the respective value for Gate to Channel Voltage & Gate to Drain Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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