Saturation Voltage using Threshold Voltage Solution

STEP 0: Pre-Calculation Summary
Formula Used
Saturation Voltage = Gate Source Voltage-Threshold Voltage
Vds = Vgs-Vth
This formula uses 3 Variables
Variables Used
Saturation Voltage - (Measured in Volt) - Saturation voltage in a transistor is a voltage between drain and source and its collector and emitter which is required for saturation.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage of a transistor is the voltage that falls across the gate-source terminal of the transistor.
Threshold Voltage - (Measured in Volt) - Threshold Voltage of transistor is minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
STEP 1: Convert Input(s) to Base Unit
Gate Source Voltage: 1.25 Volt --> 1.25 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vds = Vgs-Vth --> 1.25-0.7
Evaluating ... ...
Vds = 0.55
STEP 3: Convert Result to Output's Unit
0.55 Volt --> No Conversion Required
FINAL ANSWER
0.55 Volt <-- Saturation Voltage
(Calculation completed in 00.004 seconds)

Credits

Created by Akshada Kulkarni
National Institute of Information Technology (NIIT), Neemrana
Akshada Kulkarni has created this Calculator and 500+ more calculators!
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13 Semiconductor Characteristics Calculators

Conductivity in Semiconductors
Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)
Fermi Dirac Distribution Function
Go Fermi Dirac Distribution Function = 1/(1+e^((Fermi Level Energy-Fermi Level Energy)/([BoltZ]*Temperature)))
Conductivity of Extrinsic Semiconductors for N-type
Go Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron
Conductivity of Extrinsic Semiconductor for P-Type
Go Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes
Electron Diffusion Length
Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)
Energy Band Gap
Go Energy Band Gap = Energy Band Gap at 0K-(Temperature*Material Specific Constant)
Majority Carrier Concentration in Semiconductor for p-type
Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
Majority Carrier Concentration in Semiconductor
Go Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
Fermi Level of Intrinsic Semiconductors
Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2
Drift Current Density
Go Drift Current Density = Holes Current Density+Electron Current Density
Mobility of Charge Carriers
Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity
Saturation Voltage using Threshold Voltage
Go Saturation Voltage = Gate Source Voltage-Threshold Voltage
Electric Field due to Hall Voltage
Go Hall Electric Field = Hall Voltage/Conductor Width

Saturation Voltage using Threshold Voltage Formula

Saturation Voltage = Gate Source Voltage-Threshold Voltage
Vds = Vgs-Vth

What is saturation region?

For larger drain biases, the drain current saturates and becomes independent of the drain bias. Naturally, this region is referred to as the saturation region. The drain current in saturation is derived from the linear region current which is a parabola with a maximum occurring at saturation voltage.

What happens when Saturation voltage between drain and source increases?

As Vds increases, the number of electrons in the inversion layer decreases near the drain. This occurs due to two reasons. First, because both the gate and the drain are positively biased, the potential difference across the oxide is smaller near the drain end. Because the positive charge on the gate is determined by the potential drop across the gate oxide, the gate charge is smaller near the drain end. This implies that the amount of negative charge in the semiconductor needed to preserve charge neutrality will also be smaller near the drain. Consequently, the electron concentration in the inversion layer drops. Second, increasing the voltage on the drain increases the depletion width around the reverse-biased drain junction. Since more negative acceptor ions are uncovered, a fewer number of inversion layer electrons are needed to balance the gate charge. This implies that the electron density in the inversion layer near the drain would decrease even if the charge density on the gate was constant.

How to Calculate Saturation Voltage using Threshold Voltage?

Saturation Voltage using Threshold Voltage calculator uses Saturation Voltage = Gate Source Voltage-Threshold Voltage to calculate the Saturation Voltage, Saturation Voltage using Threshold Voltage in a field effective transistor is a voltage from collector to emitter required for saturation. Saturation Voltage is denoted by Vds symbol.

How to calculate Saturation Voltage using Threshold Voltage using this online calculator? To use this online calculator for Saturation Voltage using Threshold Voltage, enter Gate Source Voltage (Vgs) & Threshold Voltage (Vth) and hit the calculate button. Here is how the Saturation Voltage using Threshold Voltage calculation can be explained with given input values -> 0.55 = 1.25-0.7.

FAQ

What is Saturation Voltage using Threshold Voltage?
Saturation Voltage using Threshold Voltage in a field effective transistor is a voltage from collector to emitter required for saturation and is represented as Vds = Vgs-Vth or Saturation Voltage = Gate Source Voltage-Threshold Voltage. Gate Source Voltage of a transistor is the voltage that falls across the gate-source terminal of the transistor & Threshold Voltage of transistor is minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
How to calculate Saturation Voltage using Threshold Voltage?
Saturation Voltage using Threshold Voltage in a field effective transistor is a voltage from collector to emitter required for saturation is calculated using Saturation Voltage = Gate Source Voltage-Threshold Voltage. To calculate Saturation Voltage using Threshold Voltage, you need Gate Source Voltage (Vgs) & Threshold Voltage (Vth). With our tool, you need to enter the respective value for Gate Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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