Total Source Parasitic Capacitance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Csop = (Cjbs*As)+(Cbsw*Ps)
This formula uses 5 Variables
Variables Used
Source Parasitic Capacitance - (Measured in Farad per Square Meter) - Source Parasitic Capacitance is an unavoidable and usually unwanted capacitance.
Capacitance between Junction of Body and Source - (Measured in Farad per Square Meter) - Capacitance between Junction of Body and Source is defined as the capacitance between the junction of the body and the source junction of MOSFET.
Area of Source Diffusion - (Measured in Square Meter) - Area of Source Diffusion is defined as net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate.
Capacitance between Junction of Body and Side wall - (Measured in Farad per Meter) - Capacitance between Junction of Body and Side wall is a parasitic capacitance that can affect circuit performance.
Sidewall Perimeter of Source Diffusion - (Measured in Meter) - Sidewall Perimeter of Source Diffusion is defined as perimeter of source diffusion not including edge under gate.
STEP 1: Convert Input(s) to Base Unit
Capacitance between Junction of Body and Source: 76.46 Microfarad per Square Millimeter --> 76.46 Farad per Square Meter (Check conversion here)
Area of Source Diffusion: 5479 Square Millimeter --> 0.005479 Square Meter (Check conversion here)
Capacitance between Junction of Body and Side wall: 0.1391 Microfarad per Millimeter --> 0.0001391 Farad per Meter (Check conversion here)
Sidewall Perimeter of Source Diffusion: 301.64 Millimeter --> 0.30164 Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Csop = (Cjbs*As)+(Cbsw*Ps) --> (76.46*0.005479)+(0.0001391*0.30164)
Evaluating ... ...
Csop = 0.418966298124
STEP 3: Convert Result to Output's Unit
0.418966298124 Farad per Square Meter -->0.418966298124 Microfarad per Square Millimeter (Check conversion here)
FINAL ANSWER
0.418966298124 0.418966 Microfarad per Square Millimeter <-- Source Parasitic Capacitance
(Calculation completed in 00.004 seconds)

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25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI
Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
Body Effect Coefficient
Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
Junction Built-in Voltage VLSI
Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
PN Junction Depletion Depth with Source VLSI
Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Short Channel Saturation Current VLSI
Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
Junction Current
Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
Surface Potential
Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Threshold Voltage when Source is at Body Potential
Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
DIBL Coefficient
Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Threshold Voltage
Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
Gate Capacitance
Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
Subthreshold Slope
Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
Channel Charge
Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Gate Length using Gate Oxide Capacitance
Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
Gate Oxide Capacitance
Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)
Oxide Capacitance after Full Scaling VLSI
Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
Critical Voltage
Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Gate Oxide Thickness after Full Scaling VLSI
Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
Go Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
Go Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
K-Prime
Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Total Source Parasitic Capacitance Formula

Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Csop = (Cjbs*As)+(Cbsw*Ps)

What is MOS diffusion capacitance model?

The p–n junction between the source diffusion and the body contributes parasitic capacitance across the depletion region. The capacitance depends on both the area AS and sidewall perimeter PS of the source diffusion region. The geometry is illustrated in Figure 2.12. The area is AS = WD. The perimeter is PS = 2W + 2D. Of this perimeter, W abuts the channel and the remaining W + 2D does not.

How to Calculate Total Source Parasitic Capacitance?

Total Source Parasitic Capacitance calculator uses Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion) to calculate the Source Parasitic Capacitance, The Total Source Parasitic Capacitance formula is defined as an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. Source Parasitic Capacitance is denoted by Csop symbol.

How to calculate Total Source Parasitic Capacitance using this online calculator? To use this online calculator for Total Source Parasitic Capacitance, enter Capacitance between Junction of Body and Source (Cjbs), Area of Source Diffusion (As), Capacitance between Junction of Body and Side wall (Cbsw) & Sidewall Perimeter of Source Diffusion (Ps) and hit the calculate button. Here is how the Total Source Parasitic Capacitance calculation can be explained with given input values -> 0.418966 = (76.46*0.005479)+(0.0001391*0.30164) .

FAQ

What is Total Source Parasitic Capacitance?
The Total Source Parasitic Capacitance formula is defined as an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other and is represented as Csop = (Cjbs*As)+(Cbsw*Ps) or Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion). Capacitance between Junction of Body and Source is defined as the capacitance between the junction of the body and the source junction of MOSFET, Area of Source Diffusion is defined as net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate, Capacitance between Junction of Body and Side wall is a parasitic capacitance that can affect circuit performance & Sidewall Perimeter of Source Diffusion is defined as perimeter of source diffusion not including edge under gate.
How to calculate Total Source Parasitic Capacitance?
The Total Source Parasitic Capacitance formula is defined as an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other is calculated using Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion). To calculate Total Source Parasitic Capacitance, you need Capacitance between Junction of Body and Source (Cjbs), Area of Source Diffusion (As), Capacitance between Junction of Body and Side wall (Cbsw) & Sidewall Perimeter of Source Diffusion (Ps). With our tool, you need to enter the respective value for Capacitance between Junction of Body and Source, Area of Source Diffusion, Capacitance between Junction of Body and Side wall & Sidewall Perimeter of Source Diffusion and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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